GaN
Publish time 2023-04-01 00:00

Specifications:
Product
| 4" GaN thick film wafer ((Undoped)) |
Dimension
| Ф100+/-0.1mm |
Thickness | 4.5+/-0.5µm, 20+/-2µm |
Orientation | C-plane (0001) +/-0.5° |
Conductivity type | N-type (Undoped) |
Resistivity (300K) | <0.5 Ω * cm |
Carrier concentration | <5x1017 cm-3 |
Mobility | ~300 cm2/V*s |
Dislocation density | Less than 5x108 cm-2 (estimated by FWHMs of XRD) |
Substrate structure | GaN on sapphire (standard:SSP, option:DSP) |
Effective area | >90% |
Packaging | Packaged in a class 100 clean room environment, in cassette of 25pcs or single container, under a nitrogen atmosphere. |
Product
| 4" GaN thick film wafer ((Si doped)) |
Dimension
| Ф100+/-0.1mm |
Thickness | 4.5+/-0.5µm, 20+/-2µm |
Orientation | C-plane (0001) +/-0.5° |
Conductivity type | N-type (Si doped) |
Resistivity (300K) | <0.05 Ω * cm |
Carrier concentration | >1x1018 cm-3 |
Mobility | ~200 cm2/V*s |
Dislocation density | Less than 5x108 cm-2 (estimated by FWHMs of XRD) |
Substrate structure | GaN on sapphire (standard:SSP, option:DSP) |
Effective area | >90% |
Packaging | Packaged in a class 100 clean room environment, in cassette of 25pcs or single container, under a nitrogen atmosphere. |