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Yong Hee
GaN
Publish time 2023-04-01 00:00
Specifications:
| Product | 4" GaN thick film wafer ((Undoped)) |
| Dimension | Ф100+/-0.1mm |
| Thickness | 4.5+/-0.5µm, 20+/-2µm |
| Orientation | C-plane (0001) +/-0.5° |
| Conductivity type | N-type (Undoped) |
| Resistivity (300K) | <0.5 Ω * cm |
| Carrier concentration | <5x1017 cm-3 |
| Mobility | ~300 cm2/V*s |
| Dislocation density | Less than 5x108 cm-2 (estimated by FWHMs of XRD) |
| Substrate structure | GaN on sapphire (standard:SSP, option:DSP) |
| Effective area | >90% |
| Packaging | Packaged in a class 100 clean room environment, in cassette of 25pcs or single container, under a nitrogen atmosphere. |
| Product | 4" GaN thick film wafer ((Si doped)) |
| Dimension | Ф100+/-0.1mm |
| Thickness | 4.5+/-0.5µm, 20+/-2µm |
| Orientation | C-plane (0001) +/-0.5° |
| Conductivity type | N-type (Si doped) |
| Resistivity (300K) | <0.05 Ω * cm |
| Carrier concentration | >1x1018 cm-3 |
| Mobility | ~200 cm2/V*s |
| Dislocation density | Less than 5x108 cm-2 (estimated by FWHMs of XRD) |
| Substrate structure | GaN on sapphire (standard:SSP, option:DSP) |
| Effective area | >90% |
| Packaging | Packaged in a class 100 clean room environment, in cassette of 25pcs or single container, under a nitrogen atmosphere. |
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