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 Yong Hee
LaAlO3 substrate
    Publish time 2024-06-04 00:00    
LaAlO3 substrate

LaAlO3 crystal is a high temperature superconducting single substrate. It is a super substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications. 


High Temperature superconductors , magnetic and ferro-electric thin films

Low loss microwave applications

Dielectric resonance applications


Good lattice match to most materials with Perovskite structure

Low dielectric constant

Low microwave loss

Growth methodCzochralski method
Crystal structurePseudocubic 
Lattice constanta=3.792 Å
Melting point (℃)2080
Density6.52 (g/cm 3)
Hardness6.5 (mohs)
Thermal expansion coefficient9.4 x10-6 /℃
Standard Size10x10x0.5mm, 5x5x0.5mm
PolishingSingle or double side polished
Crystal orientation<100>, <001>, <110> ± 0.5 º
Ra:≤ 5Å (5μm × 5μm)

100 clean bag, 1000 clean room

Product Classification