Yb:YVO4 is one of the most promising laser-active materials and more suitable for diode-pumping than the traditional Nd-doped systems. Compared with the commonly used Nd:YVO4 crystal, Yb:YVO4 crystal has a much larger absorption bandwidth to reduce thermal management requirements for diode lasers, a longer upper-laser level lifetime, three to four times lower thermal loading per unit pump power. Yb:YVO4 crystal at 1030nm is a good substitute for a Nd:YVO4 crystal at 1064nm and its second harmonic at 515nm may replace Ar-ion laser (with a large volume), which emit at 514nm.
Application：
High power CW, Q-switched and mode-locked lasers
Thin-disk lasers
Specifications:
Doping(at%): | 1-3% |
Absorption peak wavelength | 985nm |
Absorption bandwidth at a peak wavelength | 5nm |
Laser wavelength | 1027nm |
Lifetime of 2F5/2 ytterbium energy level | 250 μs |
Refractive index @1064 nm | n0=1,93, ne=2,1 |
Crystal structure | Tetragonal |
Density | 4,22 g/cm3 |
Mohs hardness | 5 |
Thermal conductivity | ~5 Wm-1K-1 |
Thermal expansion coefficient | 1,5 × 10-6 (//a) K-1, 8,2 × 10-6 (//c) K-1 |
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