N-type silicon carbide substrate material is an essential material to support the development of the power electronics industry. Its outstanding physical characteristics such as high-pressure resistance and high-frequency resistance can be widely used in high-power high-frequency electronic devices, electric vehicle PCU, photovoltaic inverter, rail transit power control system and other fields, and can play a role of reducing volume simplification system and improving power density.
Features:
It has outstanding physical characteristics such as high-pressure resistance and high-frequency resistance.
Applications:
N-type silicon carbide substrate material is an essential material to support the development of the power electronics industry.
It can be used in high-frequency electronic devices, electric vehicle power control unit(PCU), photovoltaic inverter, rail transit power control system and other fields, and can play a role of reducing volume simplification system and improving power density.
Parameters | |||
Growth Method | Seed crystal sublimation method, PVT (Physical gas phase transfer) | ||
Crystal Structure | Hexagonal | ||
Lattice Constant | a=3.08 Å, c=15.08 Å | ||
Marshalling Sequence | ABCACB(6H), ABCBABCB(4H) | ||
Band gap | 2.93 eV | ||
Mohs Hardness | 9.2 (mohs) | ||
Thermal Conductivity @300K | 5 (W/ cmK) | ||
Dielectric Constant | e(11)=e(22)=9.66 e(33)=10.33 | ||
Conductor Type | I | N | |
Dopant | Undoped | Vanadium | Nitrogen |
Resistivity （ohm.cm） | ˃ 1 x 107 | ˃ 1 x 105 | 0.01-0.2 |
Dimension | 5x5mm，10x10mm，15x15mm，20x20mm | ||
Ø50.8, Ø100 mm, Ø150mm | |||
Thickness | 0.33/0.35/0.5mm, According to customer needs, substrates with special orientation and size can be customized. | ||
Polishing | One side or two sides | ||
Orientation | <0001>or <0001>off 4.0º | ||
Orientation Tolerance | ±0.5° | ||
Edge Orientation Accuracy | 2°（Special requirements can reach within 1°） | ||
Surface Roughness | Ra<5Å（5×5μm） | ||
Package | Class 100 clean bag, Class 1000 super clean room | ||
Add: No.39, Xiang Yuan Road, Gong Shu District, Hangzhou, China. P.C.310011 Tel: +86.13968086893 Fax: +86.571.88095310