Yb:YAG is one of the most promising laser-active materials and more suitable for diode-pumping than the traditional Nd-doped systems. Compared with the commonly used Nd:YAG crsytal, Yb:YAG crystal has a much larger absorption bandwidth to reduce thermal management requirements for diode lasers, a longer upper-laser level lifetime, three to four times lower thermal loading per unit pump power. Yb:YAG crystal is expected to replace Nd:YAG crystal for high power diode-pumped lasers and other potential applications.
Advantages:
High optical quality
Very high slope efficiency
Very low fractional heating, less than11%
No excited-state absorption or up-conversion
Broad absorption bands, about 8nm@940nm
High thermal conductivity and large mechanical strength
Conveniently pumped by reliable InGaAs diodes at 940nm
Specifications:
Doping(at%): | 1.0%~25% |
Orientation: | <111> within 5° |
Wavefront Distortion: | <λ/8 per inch@632.8 nm |
Dimension Tolerances: | rods with diameter: +0.0/-0.05 mm , Length: +0.5/-0mm |
Surface Quality: | 10/5 Scratch/Dig MIL-O-1380A |
Parallelism: | <10″ |
Perpendicularity: | <5′ |
Clear Aperture: | >90% |
Surface Flatness: | λ/10@ 632.8 nm |
Chamfer: | 0.1mm@45deg |
Barrel Finish: | Fine ground, Polishing |
Size | diameter: 2~20mm, length: 5~150mm |
Coating | AR@1030nm or upon customer's request |
Damage Threshold | ≥500MW/cm2 |
Add: No.39, Xiang Yuan Road, Gong Shu District, Hangzhou, China. P.C.310011 Tel: +86.13968086893 Fax: +86.571.88095310